CZT853 surface mount high current silicon npn transistor maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 200 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 6.0 v collector current i c 6.0 a power dissipation p d 3.0 w (note 1) operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 41.7 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =150v 10 na i cer v ce =150v, r be 1k? 10 na i cbo v cb =150v, t a =100c 1.0 a i ebo v eb =6.0v 10 na bv cbo i c =100 a 200 220 v bv cer i c =10ma, r be 1k? 200 210 v bv ceo i c =10ma 100 110 v bv ebo i e =100 a 6.0 8.0 v v ce(sat) i c =100ma, i b =5ma 22 50 mv v ce(sat) i c =2.0a, i b =100ma 135 170 mv v ce(sat) i c =5.0a, i b =500ma 340 mv v be(sat) i c =5.0a, i b =500ma 1.25 v sot-223 case central semiconductor corp. tm r1 (30-january 2006) description: the central semiconductor CZT853 type is a high current npn silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. marking code: full part number pnp complement: czt953 notes: (1) fr-4 epoxy pc board with copper mounting pad area of 4in 2 (minimum)
central semiconductor corp. tm sot-223 case - mechanical outline CZT853 surface mount high current silicon npn transistor r1 (30-january 2006) lead code: 1) base 2) collector 3) emitter 4) collector marking code: full part number electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units h fe v ce =2.0v, i c =10ma 100 h fe v ce =2.0v, i c =2.0a 100 200 300 h fe v ce =2.0v, i c =4.0a 50 100 h fe v ce =2.0v, i c =10a 20 30 f t v ce =10v, i c =100ma, f=50mhz 190 mhz c ob v cb =10v, i e =0, f=1.0mhz 38 pf
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